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IGBT Module Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet S15 R15 A15 A7 A9 D1 A1 U1 V1 G15 V12 V13 K1 G1 V3 PSII 100/12* IC80 = VCES = VCE(sat)typ. = ECO-TOPTM 1 90 A 1200 V 2.8 V N15 V9 V10 Q1 N1 V6 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH t ee sh er ta nd au dl ve stil ent ti t ta c n u opm te od el pr dev Conditions Maximum Ratings 1200 20 TVJ = 25C to 150C V V TC = 25C TC = 80C 130 90 A A VGE = 15 V; RG = 15 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H 150 VCES A VCE = VCES; VGE = 15 V; RG = 15 ; TVJ = 125C non-repetitive TC = 25C 10 s W 568 typical picture, for pin configuration see outline drawing *NTC optional Features * Conditions (TVJ Characteristic Values = 25C, unless otherwise specified) min. typ. max. 2.8 3.2 3.4 IC = 125 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 3 mA; VGE = VCE VCE = VCES; V V V * * * * * * * * * * * * * * 4.5 6.5 Package with DCB ceramic base plate Isolation voltage 3000 V Planar glass passivated chips Low forward voltage drop Leads suitable for PC board soldering UL Release applied VGE = 0 V; TVJ = 25C TVJ = 125C 5 16 mA mA Applications VCE = 0 V; VGE = 20 V 320 nA Inductive load, TVJ = 125C VCE = 600 V; IC = 75 A VGE = 15/0 V; RG = 15 100 50 650 50 12.1 10.5 5.5 0.44 ns ns ns ns mJ mJ AC and DC motor control AC servo and robot drives Power supplies Welding inverters Advantages Easy to mount with four screws Space and weight savings Improved temperature and power cycling capability High power density Small and light weight VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT) with heatsink compound (0.42 K/m.K; 50 m) nF 0.22 K/W K/W Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 Reverse diodes (FRED) Symbol IF25 IF80 Symbol VF IRM trr RthJC RthJH Conditions TC = 25C TC = 80C Conditions IF = 75 A; TVJ = 25C TVJ = 125C IF = 75 A; diF/dt = 750 A/s; TVJ = 125C VR = 600 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 m) Maximum Ratings 150 100 A A Characteristic Values min. typ. max. 2.2 1.6 79 220 0.9 2.5 V V A ns Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25C Module Symbol TVJ Tstg VISOL Md a Symbol dS dA Weight et he r se ta nd da l u ve stil ent ti t ta c n u opm te od el r ev pd 0.45 K/W K/W Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K Conditions Maximum Ratings -40...+125 -40...+150 3000 C C IISOL 1 mA; 50/60 Hz Mounting torque (M5) V~ Max. allowable acceleration 3 26 50 Nm lb.in. m/s 2 Conditions Characteristic Values min. typ. max. 11.2 11.2 Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) mm mm g 86 Package style and outline Dimensions in mm (1mm = 0.0394") 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 175 A 150 IC 125 TJ = 25C VGE=17V 15V 13V 11V 175 A 150 IC 125 100 75 TJ = 125C VGE=17V 15V 13V 11V 100 75 50 25 0 0,0 9V 50 25 9V 0,5 Fig. 1 Typ. output characteristics 150 125 A IC VCE = 20V TJ = 25C 100 75 50 25 0 5 6 Fig. 3 Typ. transfer characteristics 20 V VGE 15 VCE = 600V IC = 75A t ee sh er ta nd au dl ve stil ent ti t ta c n u opm te od el pr dev 121T120 1,0 1,5 2,0 2,5 3,0 V 0 121T120 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 V VCE VCE Fig. 2 Typ. output characteristics 300 A 250 200 150 100 TJ = 125C IF TJ = 25C 50 121T120 0 121T120 7 8 9 10 11 V 0,5 1,0 1,5 2,0 2,5 3,0 V 3,5 VGE VF Fig. 4 Typ. forward characteristics of free wheeling diode 300 ns trr 120 A IRM trr 80 200 10 40 5 IRM TJ = 125C VR = 600V IF = 75A 100 0 121T120 0 121T120 0 100 200 300 QG 400 nC 0 200 400 600 800 A/s -di/dt 1000 0 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 40 mJ Eon Eon td(on) tr 160 ns 120 t 20 mJ Eoff 15 Eoff td(off) 800 ns 600 t 400 30 20 80 10 VCE = 600V VGE = 15V 10 VCE = 600V VGE = 15V 40 RG = 15 TJ = 125C 121T120 5 RG = 15 200 TJ = 125C 121T120 0 0 Fig. 7 Typ. turn on energy and switching times versus collector current 25 mJ 20 Eon VCE = 600V VGE = 15V IC = 75A TJ = 125C 15 10 5 0 0 8 Fig. 9 200 A 160 ICM et e sh er ta nd au dl ve stil ent ti t ta c n u opm te od el r ev pd 50 100 150 A 0 50 100 IC IC td(on) Eon 200 ns 160 120 80 40 0 0 0 tf 150 A 0 Fig. 8 Typ. turn off energy and switching times versus collector current 2000 ns 1600 t 1200 800 400 tf 0 25 20 15 10 mJ t Eoff VCE = 600V VGE = 15V IC = 75A TJ = 125C td(off) Eoff tr 5 0 121T120 121T120 16 24 32 40 48 56 0 8 16 24 32 40 48 56 RG RG Typ. turn on energy and switching times versus gate resistor Fig.10 Typ. turn off energy and switching times versus gate resistor 1 K/W 0,1 ZthJC 120 80 40 0 121T120 0,01 RG = 15 TJ = 125C VCEK < VCES diode IGBT 0,001 0,0001 single pulse VID...125-12P1 0 200 400 600 800 1000 1200 V VCE 0,00001 0,00001 0,0001 0,001 0,01 t 0,1 s 1 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance 2005 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 |
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